【作者】 申陈海； 卢景霄； 陈永生； 郭学军； 陈庆东；

【Author】 Shen Chenhai,Lu Jingxiao~*,Chen Yongsheng,Guo Xuejun,Chen Qingdong (Key Laboratory of Materials Physics of Ministry of Education,Zhengzhou University,Zhengzhou 450052)

【机构】 郑州大学物理工程学院材料物理教育部重点实验室；

【摘要】 利用甚高频等离子增强化学气相沉积(VHF-PECVD)制备了一系列微晶硅(μc-Si:H)薄膜。研究分析了功率密度、硅烷浓度和气体流量在较高沉积气压(500Pa和600Pa)下对薄膜生长速率、结晶状况和电学特性的影响。研究表明:在高压强条件下,硅烷浓度和气体流量对沉积速率影响显著,而功率密度影响较弱;高沉积速率生长的薄膜孵化层较厚;电学特性较好的薄膜位于非晶/微晶过渡区。经过工艺的初步优化,在高压强(600Pa)条件下,使微晶硅薄膜的沉积速率提升到2.1nm/s。更多还原

【Abstract】 μc-Si:H films were deposited by VHF-PECVD,the effect of silane concentration、total flow rate and power density on the deposition rate、crystallization and electronic property ofμc-Si:H was extensively studied.The results show that the influence of siliane concentration and total flow rate on deposition rate is prominent compared with the influence of power density,the thin film deposited by high deposition rate has thicker incubation,Those films contained 30%-50%crystalline volume fraction can gain the fine photoelectronic properties.The deposition rate ofμc-Si:H has reached 2.1 nm/s by elementary optimize.更多还原