【作者】 豆玉华； 周玉琴； 朱美芳； 宋爽； 刘丰珍； 刘金龙；

【Author】 Dou Yuhua~1,Zhou Yuqin*~1,Zhu Mei fang~1,Song Shuang~2,Liu Fengzhen~1,Liu Jinlong 1(1 Graduate University of the Chinese Academy of Sciences,P.O.Box 4588,Beijing 100049; 2 Beijing Solar Energy Institute.Beijing 100083)

【机构】 中国科学院研究生院； 北京太阳能研究所；

【摘要】 采用新型的刻蚀剂,碳酸钠（Na₂CO₃）和磷酸钠（Na₃PO₄·12H₂O）实现了晶硅表面的织构。研究了刻蚀剂浓度、温度（T）、刻蚀时间（t_e）和添加剂对晶硅表面织构的影响,讨论了刻蚀机理。通过优化工艺,得到低的平均表面反射率(R_av):9.70%（NaOH）、9.76%（Na₂CO₃）阳8.63%（Na₃PO₄·12H₂O）。添加剂IPA在Na₃PO₄·12H₂O或Na₂CO₃溶液中可明显地改善织构效果。将优化工艺应用到异质结太阳电池中,改善了电池的短路电流。更多还原

【Abstract】 Using new etchants of sodium carbonate and tribasic sodium phosphate,the effect of echant concentration,etching temperature,etching time and additiveon texturization of（100） crystalline silicon（c-Si） wafer was studied.By optimized the etching parameters,the lowest values of averaged reflectance(R_av) were obtained to be 9.70%for NaOH,9.76%for Na₂CO₃ and 8.63%for Na₃PO₄.12H₂O.The mechanism of texturization by different kinds of etchant was suggested.Moreover,special emphasis was put on the role of isopropyl alcohol（IPA） for texturization.It is proved that IPA can remarkably improve the morphology of the textured surface. The optimized technique was applied to heterojunction silicon solar cells.Short current of the solar cell was ameliorated.更多还原