【作者】 张永欣； 申成民； 高鸿钧；

【Author】 Yongxin Zhang;C.M.Shen;H.J.Gao;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences;

【机构】 北京凝聚态物理国家实验室,中国科学院物理研究所；

【摘要】 通过Fe3O4纳米粒子为催化剂,使用钼网作为模版,在Si(111)基底上采用碳热还原化学气相沉积的方法实现了硼纳米线的图案化制备,并对硼纳米线的结构和图案化的场发射性质进行了分析和测试.图案化的硼纳米线的开启电场是4.6 V/μm,阈值电场是9.2 V/μm。场发射性质研究表明优良的场发射性质来源于图案化的生长降低了无规生长的硼纳米线之间的屏蔽效应。这一优异结果表明图案化的生长提高了硼纳米线的场发射性能。更多还原

【Abstract】 Patterned single boron nanowires are synthesized on the Silicon wafer(111) by a pre-manipulation to pattern the Fe3O4 catalyst particles with a grid template as the mask through carbon thermoreduction method.The patterned boron nanowires exhibit better field emission properties than large area boron nanowires.The patterned boron nanowires’ turn-on electric field is 4.6Vμm-1 and threshold electric field is 9.2 Vμm-1,which is lower than that of the large area boron nanowires.The good field emission performance of patterned boron nanowires arise from the decreased screening effect.These results show that the patterned growth is enhance the field emission performance of boron nanowires.更多还原