【作者】 李景； 季恒星； 张星； 王选芸； 金智； 王栋； 万立骏；

【Author】 Jing Li;Heng-Xing Ji;Xing Zhang;Xuan-Yun Wang;Zhi Jin;Dong Wang;Li-Jun Wan;Kay Laboratory of Molecular Nanostructure and Nanotechnology and Beijing National Laboratory for Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences (CAS);Department of Materials Science&Engineering,University of Science and Technology of China;Institute of Microelectronics,Chinese Academy of Sciences;

【机构】 中国科学院化学研究所； 中国科学技术大学； 中国科学院微电子研究所；

【摘要】 我们通过系统研究化学气相沉积温度和气体流速对于石墨烯生长结构的影响,发展了一种1-3层石墨烯的常压可控生长方法。利用该方法可在铜箔表面获得了1-3层石墨烯。紫外-可见光谱,拉曼以及扫描电子显微镜等表征手段表明石墨烯层数可控性好(覆盖度～90%),而且石墨烯形态不受铜箔放置位置的影响(1.5×6.0cm2铜箔表面石墨烯均一)。此外,对于三层石墨烯生长中间态的研究表明,石墨烯的成核层数一致,并且在后续生长过程中,石墨烯均在原有层数基础上继续生长直至拼接铺满铜表面。可能机理为,在低温和高流速条件下,石墨烯边缘的碳氢键比例更高,碳自由基插层至下层石墨烯的势垒降低,从而有利于多层生长。更多还原

【Abstract】 Here we report the rational design of a three-step growth method for high-quality Mono-layer, bi-layer and tri-layer graphene with coverage higher than 90% at atmospheric pressure. The growth temperature and gas flow rate are found to be the key factors. The intermediate states of the tri-layer graphene obtained by stop growing after the nucleation and growth stage suggest that the graphene layers stacked at different levels for both bi-layer and tri-layer graphene nucleate at a same stage and grow with a same rate. This method would be of great importance for the large scale production of graphene with defined thickness.更多还原