【作者】 王娇； 曾梦琪； 谭丽芳； 付磊；

【Author】 Jiao Wang;Zeng;Tan;Fu;College of Chemistry and Molecular Science,Wuhan University;

【机构】 化学与分子科学学院,武汉大学；

【摘要】 目前,人们主要采用d区的多晶薄金属催化剂(例如,铜、镍、铂)来生长石墨烯。然而,这些金属基底晶畴小、晶界以及晶体缺陷较多,且需要严格控制石墨烯的生长过程,这严重限制均匀、高质量石墨烯的生长以及应用。我们发现低熔点液态p区元素具有较宽的熔程范围,其液态表面能够彻底消除基底表面的晶界与缺陷,以此来消除晶界对高质量石墨烯生长的影响。基于此,我们将极少量的液态p区金属催化剂(例如,镓、铟)置于高熔点支撑基底表面(例如,钨、钼),液态金属原子极佳的流动性能够形成稳定的液态表面,由于碳原子在液态表面的扩散速率高于固态表面,能够有效地避免剩余碳原子的堆积,从而能够生长均匀、高质量的石墨烯,其单晶迁移率可达7400 cm2 V-1s-1,并且支撑基底还能够重复利用,此种方法廉价、经济,所制备的石墨烯均匀性好,质量高。更多还原

【Abstract】 The high-quality and low-cost of the graphene preparation method decide whether graphene is put into the applications finally. Enormous efforts have been devoted to understand and optimize the CVD process of graphene over various d-block transition metals(e.g. Cu, Ni and Pt). Here we report the growth of uniform high-quality single-layer, single-crystalline graphene flakes and their continuous films over p-block elements(e.g. Ga) liquid films using ambient-pressure chemical vapor deposition. The graphene shows high crystalline quality with electron mobility reaching levels as high as 7400 cm2 V-1s-1 under ambient conditions. Our employed growth strategy is ultra-low-loss. We believe that our research will open up new territory in the field of graphene growth and thus promote its practical application.更多还原