【作者】 张世乾； 乔小兰； 陈莹； 王园园； 刘志强； 李洪祥； 方奇；

【Author】 Shiqian Zhang;Xiaolan Qiao;Ying Chen;Yuanyuan Wang;Zhiqiang Liu;Hongxiang Li;Qi Fang;State Key Laboratory of Crystal Materials, Shandong University;Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences;

【机构】 晶体材料国家重点实验室山东大学； 中国科学院上海有机化学研究所；

【摘要】 联噻吩和/或并噻吩是OFET材料的重要结构单元。我们通过选择性的活化芘环的不同位点,成功合成了一系列硫桥芘-苯并噻吩(PTAs)并对它们的晶体结构和光电性质进行了充分的研究。含有一个硫原子的三个位置异构体的空穴迁移率均在10-3 cm2/Vs数量级,其中[3,4-]位芘衍生物(4-S-PTA)光谱红移最明显,荧光量子产率(0.6)最高,分子间π-π堆积最强,迁移率也最高[1]。进一步的研究表明,含有并噻吩结构的双硫化合物2-S-S-PDTA比单硫化合物的迁移率提高接近一个数量级,初测结果即达到1.8×10-2 cm2/Vs。更多还原

【Abstract】 Thiophthene and/or bithiophene are important structural units of organic field effect transistor materials. A series of regioisomeric sulfur-bridged pyrene-thienoacenes(PTAs) have been synthesized by selective activation of the different sites of pyrene. Their crystal structures and optoelectronic properties have been fully investigated. Among the single sulfur containing isomers, the [3,4]-extended compound(4-S-PTA) exhibits the most pronounced spectral red-shift, the highest quantum yield(0.6) and the strongest π-π stacking as well as the largest transistor mobility(4.0 × 10-3 cm2/Vs).[1] In addition, the filed effect mobility of a new synthesized di-sulfur-containing 2-S-S-PDTA is reach to 1.8 × 10-2 cm2/Vs, which is nearly one magnitude higher than those of single-sulfur containing analogues.更多还原