【作者】 邓常猛； 耿永友； 吴谊群；

【Author】 Changmeng Deng 1,2,Yongyou Geng 1,Yiqun Wu 1,3 1 Key Laboratory of Material Science and Technology for High Power Lasers,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,PR China 2 Graduate School of Chinese Academy of Sciences,Beijing 100039,PR China 3 Key Lab of Functional Inorganic Material Chemistry(Heilongjiang University),Ministry of Education,Harbin 150080,PR China

【机构】 中国科学院上海光学精密机械研究所,中国科学院强激光材料重点实验室； 中国科学院研究生院； 功能无机材料化学省部共建教育部重点实验室(黑龙江大学)；

【摘要】 GeSbTe是一种广泛研究用于光存储和电存储的相变材料,其在激光辐照产生的热效应的作用下可以发生晶态与非晶态之间的相互转化。这种相态之间的变化会引起物理化学性质的变化。在合适的刻蚀液中,两相的刻蚀速率会表现出差别,基于这种差别可以用相变材料制备微纳图形结构。找到合适的刻蚀液是实现这种选择性刻蚀的关键。刻蚀液会影响刻蚀的选择性、刻蚀速率和表面粗糙度等重要因素。为了使相变材料实现相变,激光必须达到一定的输出功率,且激光功率和辐照时间对最后图形的尺寸和形貌也有很重要的影响。在连续光和脉冲激光的作用下可以分别获得平滑的线、点结构。更多还原

【Abstract】 GeSbTe,as a typical phase change material,is widely studied for optical and electric storage.Phase transition between amorphous and crystalline states can be carried out with laser irradiation due to thermal effect.Combination with phase change,physical and chemical properties change as well.Thus the two states have different etching rates in a proper etchant.And micro/nano patterns can be fabricated by this kind of wet etch.The key problem is to find the proper etchant because the etchant has affect on etching selectivity,etching rate and surface roughness after etch et al.Laser power and duration time both have affect on the feature of patterns.Neat lines and dots can be fabricated by continue laser light and pulse laser light,respectively.更多还原