【作者】 黄永清； 段晓峰； 王伟； 颜强； 邸菁； 任晓敏； 黄辉； 王琦；

【Author】 Yongqing Huang,Xiaofeng Duan,Wei Wang,Qiang Yan,Jing Di,Xiaomin Ren,Hui Huang,Qi Wang Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications),Ministry of Education,P.O.Box 66 (BUPT),Beijing,China 100876

【机构】 北京邮电大学,信息光子学与光通信教育部重点实验室；

【摘要】 本文报道了一种单片集成的1550nm的四镜三腔谐振腔增强型半导体光探测器。通过多腔的设计解决了传统谐振腔增强型(RCE)光探测器量子效率、高速响应和光谱响应线宽之间的相互制约问题;利用InP/GaAs低温缓冲层技术解决了大失配异质外延生长的问题,器件可以同时获得高速、高量子效率和窄的光谱响应线宽。制备的器件响应波长为1550nm,峰值量子效率接近70%,其光谱线宽为0.5nm,3dB响应带宽大于8GHz。更多还原

【Abstract】 The 1550nm Monolithically Integrated resonant cavity enhanced (RCE) photodetector with four-mirror and three-cavity (M4C3) is reported.The contradiction among the quantum efficiency,high response speed and the narrow spectral response linewidth eacch other is overcome by the design of multi-cavities sructure.The high-quality GaAs/InP heteroepitaxy was realized by employing a thin low temperature buffer layer.By adopting M4C3 structure,high quantum efficiency,high response speed,and a narrow spectral response linewidth can be obtained simultaneously.A peak quantum efficiency of about 70%,a spectral linewidth of 0.5 nm and a 3-dB bandwidth of 8.0 GHz have been obtained in this device.更多还原