【作者】 李豪； 耿永友； 吴谊群；

【Author】 LI Hao 1,2 GENG Yong-you 1 WU Yi-qun,1,3 (1 Key Laboratory of Material Science and Technology for High Power Lasers,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China) (2 Graduate School of Chinese Academy of Science,Beijing 100039,China) (3 Key Lab of Functional Inorganic Material Chemistry (Heilongjiang University),Ministry of Education,Harbin 150080,China)

【机构】 中国科学院上海光学精密机械研究所,中国科学院强激光材料重点实验室； 中国科学院研究生院； 黑龙江大学无机功能材料化学重点实验室,教育部；

【摘要】 AgInSbTe薄膜作为一种典型的快速相变材料被广泛应用于信息数据存储。本文首次研究报道了AgInSbTe薄膜的湿法腐蚀特性。结果表明在盐酸、硫酸、磷酸、硝酸、氢氧化钠、硫化钠、硫化铵、正丁胺、环己胺等几种腐蚀液中晶态AgInSbTe薄膜的腐蚀速度大于非晶态AgInSbTe薄膜。在硫化铵溶液中,经过激光初始化的AgInSbTe薄膜具有明显的腐蚀选择特性。而且,AgInSbTe薄膜的湿法腐蚀选择特性还与激光作用功率条件有关,本文通过优化激光作用条件得到最优激光作用功率为900mW。通过光学显微镜和原子力显微镜观测显示在硫化铵腐蚀液中腐蚀后可以得到表面粗糙度小且边界形貌规则的刻蚀结构。更多还原

【Abstract】 AgInSbTe thin film as typical fast phase change material was widely used for information data storage.In this work,the wet-etching characteristics of AgInSbTe films were studied for the first time.It was found that the etching rate of crystalline AgInSbTe film was larger compared to amorphous AgInSbTe film in these etchants,including hydrochloric acid,sulfuric acid,phosphoric acid,nitric acid,sodium hydroxide,sodium sulfide,ammonium sulfide,butylamine,and hexahydroaniline,respectively.The selective wet-etching characteristics of initialized AgInSbTe films were most remarkable in ammonium sulfide.Moreover,the selective wet-etching characteristics of AgInSbTe films were relate to the initialized power,and the optimized initialized power was 900mW.By means of optical microscope and atomic force microscope (AFM) measurements,it was found that small surface roughness and regular boundary morphology on the etched AgInSbTe films could be obtained in ammonium sulfide.更多还原