【作者】 刘文鹏； 张庆礼； 孙敦陆； 谷长江； 罗建乔； 王迪； 江海河； 殷绍唐；

【Author】 Liu Wenpeng,Zhang Qingli,Sun Dunlu,Gu Changjiang,Luo Jianqiao,Wang Di,Jiang Haihe,Yin Shaotang The key laboratory of photonic devices and materials,Anhui Province,Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Anhui Hefei,230031

【机构】 中科院安徽光学精密机械研究所安徽省光子器件与材料重点实验室；

【摘要】 采用中频感应提拉法生长出了Sm:GGG晶体,通过X射线荧光测得了Sm3+离子掺杂浓度,测试了晶体的吸收光谱和荧光光谱。通过J-O理论计算出强度参数Ωt(t=2,4,6),同时计算了4G5/2能级的自发跃迁几率、荧光分支比和辐射寿命。计算了荧光发射谱中567nm、613nm、662nm和710nm发射峰对应的发射截面。测量了405nm激发下,613nm发射的荧光衰减曲线,拟合出了荧光寿命。更多还原

【Abstract】 Sm:GGG crystal was grown by Cz method,the doped Sm 3+ ions concentration was obtained through X-ray fluorescence,and the absorption and fluorescence spectra of Sm:GGG were measured.According to J-O theory,the intensity parameters Ωt (t=2,4,6),spontaneous transition probabilities,branching ratios and radiative lifetime of 4 G 5/2 state were calculated.The emission cross-sections of 567nm,613nm,662nm and 710nm emission peaks were calculated.The decay curve of 613nm emission by 405nm excitation was measured and the fluorescence lifetime was also fitted out.更多还原