【作者】 钟树泉； 任晓敏； 黄辉； 黄永清； 王琦； 张霞；

【Author】 Zhong Shuquan Ren Xiaomin Huang Hui Huang Yongqing Wang Qi Zhang Xia (Key Laboratory of Information Photonics and Optical Communication,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China)

【机构】 北京邮电大学信息光子学与光通信教育部重点实验室；

【摘要】 将硼化物溶液用于InP/Si晶片键合的表面处理工艺,实现了两种材料之间简单、无毒性的低温(280℃)晶片键合。基于这种低温键合技术,从物理化学、热力学等理论出发,结合高分辨率透射电镜(HRTEM)、拉曼光谱(Raman)、X射线光电子能谱(XPS)、二次离子质谱(SIMS)等分析的基础上,建立了InP/Si键合的机理模型,它十分清晰地说明了晶片预处理与退火过程中,每一步骤所引发的物理与化学变化细节,并且阐明了晶片中间层原子迁移变化所形成的微晶玻璃材料,其结构为Na2O-SiO2-B2O3-In2O3-POx。以上所得结果,对于分析高质量的键合工艺以及开发新型的键合方案十分有益。更多还原

【Abstract】 The low temperature bonding of InP/Si wafers is successfully presented by a new boride surface treatment.In this secure approach combined with physical chemistry,thermodynamics theory and HRTEM image,Raman spectra,XPS spectrum,SIMS measurement,we have established a new approach to the InP/Si wafer bonding mechanism that explains the basic steps during the pretreatment and annealling processes from room temperature to 280℃.It gives us the presence of the available nanometer scale information at the bonding interface where the ultra-thin Na 2 O-SiO 2-B 2 O 3-In 2 O 3-PO x oxide layer was formed.The atomic bond patterns are first constructed locally across the two wafer surfaces.The results are very beneficial to analysis the high quality bonding process and develop new technique of wafer bonding.更多还原