【作者】 普朝光； 吕励； 杨漾；

【Author】 Chaoguang Pu 1,Li L 2,Yang,Y 1 1,Kunming Institute of Physics,The East Jiaochang road 31 st,Kunming 650223,Yunnan Province,P.R.China

【机构】 昆明物理研究所；

【摘要】 利用射频磁控溅射法生长了PZT及PMN-PT薄膜,提出了"分级退火"的概念,对PZT及PMN-PT薄膜的低温热处理技术进行了探索,研制出了PZT及PMN-PT薄膜材料样品,并测出了其热释电响应性能。实验表明,PZT及PMN-PT薄膜在550℃及450℃下就能完全晶化成钙钛矿结构,其热释电系数分别达到1-3.2×10-8Ccm-2K-1及2-10×10-9Ccm-2K-1,有望成为解决目前阻碍集成式铁电型非制冷焦平面探测器技术发展的瓶径问题,即铁电薄膜生长的高温与CMOS电路的兼容性问题的潜在可用材料。更多还原

【Abstract】 PZT and PMN-PT ferroelectric thin film have been prepared by RF magnetron sputtering at an optimal substrate temperature.A new annealing procedure with the pre-annealing at an optimal substrate temperature when film deposition,followed by the annealing at a higher temperature,has been utilized to study the annealing effect on the IR Performance of the thin films.The experimental results show that pre-annealing at 450℃ and 350℃ for 5 minutes followed by annealing at 550℃ and 450℃ for 5 minutes are enough for the perovskite formation of the PZT and PMN-PT film deposited at an in-situ temperature 450℃ and 350℃,respectively.The test of the samples’ IR performance with the pyroelectric coefficients of 1-3.2×10-8 Ccm-2 K-1 and 2-10×10-9 Ccm-2 K-1 respectively for PZT and PMN-PT films seems that the new annealing procedure in this paper is hoped to play an important role in the development of the monolithic ferroelectric uncooled focal plane arrays.更多还原