【作者】 雷平顺； 薛力芳； 何军； 曾华林； 付跃刚； 周燕；

【Author】 LEI Ping-shun 1,2,XUE Li-fang 2,ZENG Hua-lin 2,ZHOU Yan 2 (1.College of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130021,China;2.Institute of Semiconductors,the Chinese Academy of Sciences,Beijing 100083,China)

【机构】 长春理工大学光电工程学院； 中国科学院半导体研究所；

【摘要】 在讨论光栅外腔半导体激光器理论的基础上,对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析。研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400mA时,连续输出功率达到180mW,线宽优于1MHz。更多还原

【Abstract】 Based on the discussion of the grating external cavity semiconductor lasers,the influences of the different factors on the output power and linewidth reduction of the Littrow-type external cavity semiconductor lasers had been numerical simulated.The Littrow-type grating external cavity semiconductor laser is set up,and realizes single longitudinal mode and highly-equality laser output.The continual output power is achieved with 180mW at working current with 400mA,and the spectrum linewidth is narrower to be less than 1MHz.更多还原