【作者】 张可锋； 林杏潮； 张莉萍； 王仍； 焦翠灵； 陆液； 王妮丽； 李向阳；

【Author】 ZHANG Kefeng,LIN Xingchao,ZHANG Liping,WANG Reng,JIAO Cuiling,LU Ye,WANG Nili,LI Xiangyang (Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)

【机构】 中国科学院上海技术物理研究所红外成像材料与器件重点实验室；

【摘要】 窄禁带碲镉汞(HgCdTe)为电子和空穴混合导电的多载流子体系材料,特别是对于"弱p型"材料,由于电子和空穴的迁移率相差大约两个数量级,更容易受到少数载流子电子的干扰,因此单一磁场的霍尔测试无法区分迁移率较低性能较差的n型材料和p型材料。本文通过变温变磁场的霍尔测试对两种碲镉汞材料的磁输运特性进行了测试区分。另外,本文还对由"弱p型"材料制备的"陷阱模式"光导器件的工作机理进行了初步分析,解释了这种器件相对于传统器件所表现出的独特优势。更多还原

【Abstract】 Very-narrow-gap bulk-grown HgCdTe single crystals were multicarrier semiconductor system material,since multiple electrons and holes species frequently contribute to the conduction.Especially,for the slightly p-type HgCdTe single crystals,the evaluated based on conventional measurements at a single magnetic field could lead to erroneous conclusions,because of the large ratio of the electron mobility to hole mobility (b=μ e /μ h ≈10 2).The n-type with poor mobility and slightly p-type with excellent electrical properties couldn’t be distinguished by the conventional single-field data.Variable-magnetic-field Hall measurements were performed on bulk-grown HgCdTe single crystals at various temperatures in this paper.From the results,the Variable-magnetic-field Hall measurements were found to be a suitable tool for differentiation electrical characterization of the two type HgCdTe single crystals.The operating principle of the trapping-mode photoconductive HgCdTe detectors was investigated.更多还原