【作者】 郭经纬； 黄辉； 叶显； 任晓敏； 蔡世伟； 王伟； 王琦； 黄永清； 张霞；

【Author】 Guo Jingwei Huang Hui Ye Xian Ren Xiaomin Cai Shiwei Wang Wei Wang Qi Huang Yongqing Zhang Xia (Key Laboratory of Information Photonics & Optical Communications Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China)

【机构】 北京邮电大学信息光子学与光通信教育部重点实验室；

【摘要】 近年来,由于纳米线所具有的新颖的物理特性,使其在电子学和光学等领域有着广阔的应用前景,引起了广泛关注。利用金辅助的金属氧化物化学气相沉积法在气-液-固生长机制下GaAs(111)B衬底上生长了GaAs纳米线。研究了三个生长温度(500℃、530℃、560℃)对纳米线形貌及晶体质量的影响。在较低生长温度时,纳米线生长速率与纳米线直径无关,且纳米线上下直径分布均匀。随着温度的增高,纳米线成明显的圆锥状。当温度升高时,相对较粗的纳米线,长度缩短,这是因为在高温时VLS生长被抑制;对于相对较细的纳米线,长度是先减少后增大,这是由于在温度升高时Ga原子的扩散作用增大。温度的升高还导致了纳米线晶体质量的下降。低温时只有少量缺陷在相对较细的纳米线中出现;对于相对较粗的纳米线,其晶体结构为纯的闪锌矿结构。温度增高导致了Au-Ga合金纳米颗粒的不稳定,从而造成了缺陷的增加。更多还原

【Abstract】 In recent years,semiconductor nanowires (NWs) have drawn a great deal of attention owing to their potential applications in electronic and optoelectronic devices.In this paper,we investigate the effect of temperature on GaAs NWs growth.Three samples were grown on GaAs(111)B substrate by Au-assisted metalorganic chemical vapor deposition using VLS mechanism at 500℃,530℃ and 560℃,respectively.It was find all samples were vertical to the substrate.Their lengths grown at low temperature were independent with their diameters and the NWs were straight from base to top.The growth rate of thick NWs increased reversely with growth temperature.That was because the VLS mechanism growth was suppressed at high temperature.For thin NWS,the growth was induced by Ga atom diffusion at high temperature.The NWs grown at high temperature tapered.That ascribed to lateral growth on NWs sidewalls.It was revealed that crystalline structure of NWs grown at low temperature was pure zinc blende (ZB) and there is no defect in thick NWs.At high temperature,there were many defects in NWs,such as stacking faults and twins.更多还原