【作者】 陈柳炼； 马斌； 施永明； 翟厚明；

【Author】 Chen Liulian,1,2 Ma Bin 1 Shi Yongming 1 Zhai Houming 1 (1 Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) (2 Graduate School of Chinese Academy of Sciences,Beijing 100039,China)

【机构】 中科院上海技术物理研究所红外成像材料与器件重点实验室； 中国科学院研究生院；

【摘要】 对磁控溅射法制备的氧化钒(VOx)薄膜在N2气氛中进行了不同时间的450℃退火实验,并研究了其退火前后的形貌、结构、成分和电学特性的变化.电阻温度特性测试表明,退火后薄膜的R和TCR(电阻温度系数)都明显增大.从SEM和AFM图像可以观察到,薄膜在退火后其晶粒大小和粗糙度都大大增加.由XRD分析得知薄膜退火前是非晶的,而在退火后出现V2O5(001)和VO2(011,1-10)以及V2O3(113)结晶相.XPS定量分析表明薄膜在N2气氛中退火也被氧化了,这是由于薄膜表面的吸附氧转为化晶格氧所所致.更多还原

【Abstract】 In this paper,annealing experiments were performed at 450℃ in N 2 atmosphere for different hours on vanadium oxide films prepared by RF magnetron sputtering.Changes in surface morphology,electrical,structural properties and chemical composition were studied.From R-T measurement and calculation,it was found that both R and TCR (Temperature Coefficient of Resistance) of the films were increased after annealing.From SEM and AFM images,it was observed that both grain size and surface roughness were aggrandized greatly after annealing.XRD analysis showed that the as-sputtered film was almost amorphous while new phases V 2 O 5 (0 0 1),VO 2 (0 1 1,1-1 0) and V 2 O 3 (1 1 3) appeared in the annealed films.XPS quantitative analysis indicated that the annealed films were oxidized possibly due to adsorbed oxygen to lattice oxygen transition更多还原