节点文献
薄壁开口定向氮掺杂碳纳米管的制备及其优异的场发射性能
Synthesis and Excellent Field-Emission Properties of Thin-walled,Open-Ended,Well-Aligned and N-Doped Carbon Nanotubes
【作者】 崔同湘; 吕瑞涛; 康飞宇; 黄正宏; 王昆林; 吴德海;
【Author】 Cui Tong-xiang~1,Lv Rui-tao~1,Kang Fei-yu~1,Huang Zheng-hong~1,Wang Kun-lin~2,Wu De-hai~2 (1.Department of Materials Science and Engineering,Laboratory of Advanced Materials,Tsinghua University,Beijing 100084,China 2.Department of mechanical Engineering,Key Laboratory for advanced manufacturing by materials processing Technology of Ministry of education,Tsinghua University,Beijing 100084, China)
【机构】 清华大学材料科学与工程系先进材料教育部重点实验室; 清华大学机械工程系先进成型制造教育部重点实验室;
【摘要】 本文以乙腈为碳源,二茂铁为催化剂,用化学气相沉积(CVD)法,制备了薄壁开口定向氮掺杂的多壁碳纳米管.在780℃到860℃的生长温度范围内,随着温度的升高,碳纳米管的场发射效应增强.当生长温度为860℃时,制备碳纳米管的开启电场为0.27 V/μm,阈值电场为O.49 V/μm,增强因子为1.09×105.与其它材料相比,这种碳纳米管体现了非常优越的场发射性能.
【Abstract】 Thin-walled,open-ended,aligned and N-doped multi-walled carbon nanotubes(CNTs) were synthesized using acetonitrile as carbon source,ferrocene as catalyst by chemical vapor deposition(CVD) method.It is found that the field-emission properties become better as the growth temperature rises in the range of 780-860℃.When the growth temperature is kept at 860℃,the turn-on field is 0.27 V/μm,threshold field 0.49 V/μm,field-enhancement factors 1.09×105. Compared with other materials,this kind of CNTs show outstanding field-emission properties.
- 【会议录名称】 第22届炭—石墨材料学术会论文集
- 【会议名称】第22届炭—石墨材料学术会
- 【会议时间】2010-10-01
- 【会议地点】中国浙江宁波
- 【分类号】TB383.1
- 【主办单位】中国电工技术学会碳·石墨材料专业委员会(The Specific Committee on Carbon-Graphite Materials of the China Electrotechnical Society)