【作者】 梁竹关； 赵东风； 任文平； 胡问国； Syed K.Islam；

【Author】 Zhuguan Liang Dongfeng Zhao Hongwei Ding Wenping Ren Wenguo Hu Syed K.Islam (1 Department of Electrical Engineering Department of Communications Engineering Department of Physics Yunnan University Kunming Yunnan650091 China 2 Department of Electrical and Computer Engineering The University of Tennessee Knoxville TN37996 USA

【机构】 电子工程系通信工程系物理系云南大学； 田纳西大学电子与计算机工程系；

【摘要】 在本论文中,我们采用AMI 0.5um CMOS工艺设计和仿真一个可为移植传感器系统非接触供电的射频电源电路。用内置电池给移植传感器系统供电往往是不现实可行的。该射频电源电路可以取代内置电池为移植传感器供电,它的主要组成部分有:射频匹配网络、PMOS门交叉联接桥式整流电路、滤波器、旁路式稳压电路、以及带隙参考电路。仿真结果表明,达到稳态时,该射频电源电路能够输出比较稳定的直流电压1.0V;并且在一定的温度范围内(7℃～57℃),该射频电源电路输出电压几乎不随温度而变化,仿真结果说明该射频电源电路可应用于移植传感器系统,为移植传感器系统正常工作有效地提供能量。更多还原

【Abstract】 A RF power supply circuit for the implantable sensors has been designed and simulated in the AMI 0.5um CMOS process.The RF power supply circuit can replace the battery to supply the implantable sensors to operate continually.The RF power supply circuit mainly comprises the RF matching network,PMOS gate cross-connected bridge rectifier,shunt regulator,and bandgap reference voltage circuit.With the AMI 0.5um CMOS process,the simulated results show the RF power supply output voltage can achieve 1.0V,and,in the temperature range 7℃~57℃,the RF power supply output voltage vary a little with the temperature,which can efficiently supply the energy to the implantable sensor systems.更多还原