【作者】 孙言飞； 杨玮； 简基康；

【Author】 SUN Yan-Fei,YANG Wei,JIAN Ji-Kang (School of Physics Science and Technology,Xinjiang University,Urumqi 830046,China)

【机构】 新疆大学物理科学与技术学院；

【摘要】 本文介绍了无催化剂辅助条件下,化学气相沉积法生长GaN纳米材料的形貌演化。通过调整衬底、NH3气流、生长时间等生长参数,实现了半导体GaN纳米线的合成以及形貌调控。用X射线衍射仪和扫描电子显微镜对产物的物相及形貌进行了表征。获得了合成GaN纳米线最合适的条件。本实验可以作为综合设计性实验,在材料物理及相关专业高年级大学生的教学中应用。更多还原

【Abstract】 The morphological evolution of Gallium nitride(GaN)nanostructures grown by a catalyst-free chemical vapor deposition(CVD)process was examined.GaN nanowires were synthesized and their morphologies can be tuned by adjusting the growth parameters including substrates,flow of NH3,and growth duration.The crystalline structure and morphology of as-grown products were characterized by X-ray diffraction(XRD)and scanning electron microscopy(SEM).The optimum synthetic parameters of GaN nanowires were obtained in the experiments.The experiment could be used as an exploring experiment for senior undergraduate students majoring in material physics and related specialties.更多还原