【作者】 季春花； 凌惠琴； 曹海勇； 李明； 毛大立；

【Author】 JI Chun-hua~*,LING Hui-qin,LI Ming,MAO Da-li Institute of Materials Science and Engineering,Shanghai Jiaotong University, Shanghai 200240,China

【机构】 上海交通大学材料科学与工程学院；

【摘要】 TSV叠层式电子封装是今后三维封装重点发展的一种封装技术,其关键技术之一是TSV硅孔镀铜填充技术。本研究针对TSV硅孔镀铜用甲基磺酸铜高速镀液中Cl~-的作用及机理展开了系统研究。利用旋转圆盘电极研究了不同扩散条件下Cl~-的作用效果,并采用阻抗谱和电子顺磁共振(EPR)探讨了Cl~-在电化学沉积中的影响机制和对Cu~+配位场的影响。研究结果表明:在深孔内扩散控制条件下,Cl~-对铜沉积有明显的加速作用,而在表面非扩散控制区域,尤其是高电流区域,Cl~-具有一定的抑制效果。因此,Cl~-的存在将有利于改善TSV深孔镀铜填充效果,提高填充速度。更多还原

【Abstract】 TSV stack packaging technology has a good potential for 3D packaging in the future.One of the key technologies for TSV packaging is TSV via copper filling technology.The effect of chloride ion on via filling in MSA bath for TSV copper interconnection was investigated.Influences of chloride ions under different forced convections were characterized using rotating disk electrode.The reaction mechanism of chloride ions during copper electrodeposition and coordination field of copper ion in presence of chloride ion were characterized by experimental impedance spectra(EIS) and electron paramagnetic resonance (EPR) respectively.Experimental results indicated that in the bottom of via where the copper electrodeposition was diffusion controlled,chloride ion can accelerate deposition while at the top of via where the copper electrodeposition was nondifussion controlled with high current density,chloride ion can inhibit deposition.The behaviors of chloride ion can enhance the TSV via filling effect and increase filling speed.更多还原