【作者】 韩司慧智； 秦秀娟； 卜丽敏； 孙学亮； 左华通；

【Author】 Han-Si Hui-zhi,Qin Xiu-Juan~*,Bo Li-Min,Sun,Xue-Liang,Zuo Hua-Tong (Environmental and Chemical Engineering College,Yanshan University,Qinhuangdao 066004)

【机构】 燕山大学环境与化学工程学院；

【摘要】 以辛基酚聚氧乙烯(10)醚(op-10)为有机添加剂,采用阴极电沉积法,制备了高质量的ZnO薄膜。样品经超声处理后,用X射线衍射和光致发光光谱研究了ZnO薄膜的结构、应力状态和发光性能的变化。结果表明:超声处理后样品的结晶性能变差,晶格内部的张应力变为压应力,395nm处的激子峰和580nm处的黄光峰强度比减小,同时发光谱中又出现了428nm的蓝光峰。分析认为580nm的黄光发射是由VOZni复合缺陷与价带顶的跃迁引起的,而428nm的蓝光发射则是由Zni与价带顶之间的跃迁引起。更多还原

【Abstract】 High quality nanocrystalline ZnO films are prepared by cathode electrodeposition technique in the presence of organic additive op- 10.After the samples are treated by use of ultrasonic,the structure,stresses state and photoluminescence properties of ZnO films are studied by x - ray diffraction and photoluminescence spectrum.The results showed that for the ZnO films as - deposited processed by post - ultrasonic,the tensile strain existed in the crystal lattice changed into compress stress, and strength ratio of emission peaks at 395 nm(UV) and 580 nm(yellow) decreased.In addition,a blue band centered at 428 nm appeared in the luminescence spectrum.We suggested that the yellow and blue emission are caused by the transition from complex of Vo and Zn_i(VoZn_i) to valence band head and from Zni defect level to valence band head.更多还原