晶格取向对铜氧化失效的影响

【作者】 高婕； 胡安民； 赵文婷； 李明； 毛大立；

【机构】 上海交通大学材料科学与工程学院；

【摘要】 本文研究了具有不同晶格取向的铜的氧化特性。结果表明,铜的晶格取向对氧化物的生长速率、氧化层的形貌以及氧化失效的程度有显著的影响。通过剪切实验,发现Cu(110)面上的氧化层与基底结合强度最佳,相反Cu(311)面上氧化层与基底结合强度最差。SEM照片显示Cu(311)面上的氧化层起皮现象最为严重,而Cu(100)和Cu(110)面则基本没有起皮现象。Cu(100)和Cu(110)面上的氧化层厚度比Cu(311)和Cu(111)上的薄。通过计算得到Cu(100)和Cu(110)表面的活化能最高,相比之下Cu(311)的最高。更多还原

【Abstract】 The influences of crystal orientation on copper oxidation were investigated.The results indicated that crystal orientation of copper substratehas a great effect on the growth rate,the morphology of oxide film and the extent of oxidation failure. Shear test showed the adhesion strength between Cu(110) and its oxide film was the highest,whereas,the adhesion strength between Cu(311) and its oxide film was the lowest.SEM observations revealed that the oxide film grown on Cu(311) delaminated from substrate seriously,while the oxide film grown on Cu(100) and Cu(110) did not reveal such a phenomenon.Cu(100)and Cu(110) exhibited thinner oxide thickness compared to those on Cu(311) and Cu(111).The activation energy for oxide growth on Cu(100) and Cu(110) was calculated to be the highest while that on Cu(311) was the lowest.更多还原