【作者】 吕艳琼； 罗洪梁； 闫德霖； 黄宇阳； 邓文；

【Author】 LU Yan-qiong,Luo Hong-liang,Yan De-lin,Huang Yu-yang,Deng Wen College of Physics Science and Technology,Guangxi University,Nanning 530004,China

【机构】 广西大学物理科学与工程技术学院；

【摘要】 本文研究了Nb₂O₅含量对ZnO-Bi₂O₃-TiO₂-Nb₂O₅系列压敏陶瓷微观缺陷和电学性能的影响。电性能测试和正电子湮没技术研究结果表明,含0.2mol%Nb₂O₅的ZnO-Bi₂O₃-TiO₂-Nb₂O₅压敏陶瓷的晶界缺陷最少,压敏电压最低。当Nb₂O₅含量超过0.2mol%时,ZnO压敏陶瓷样品中的晶界缺陷增加,压敏电压升高。更多还原

【Abstract】 The effect of Nb₂O₅ content on micro-defects and electrical properties of ZnO-Bi₂O₃-TiO₂-Nb₂O₅ varistor ceramics has been studied.Experimental results obtained by electrical property measurements and positron annihilation techniques show that the amount of the defects of grain boundaries and the varistor voltage of ZnO-Bi₂O₃-TiO₂-Nb₂O₅ ceramics reaches a minimum value when Nb₂O₅ content at 0.2mol%.For the ZnO-Bi₂O₃-TiO₂-Nb₂O₅ ceramics with Nb₂O₅ content exceeds 0.2mol%,the amount of the defects of grain boundaries and the varistor voltage of the sample will increase.更多还原