【作者】 王祖军； 陈伟； 王桂珍； 唐本奇； 肖志刚； 黄绍艳； 刘敏波； 张勇； 刘以农；

【Author】 Wang Zujun1,2, Chen Wei2 , Wang Guizhen2, Tang Bengqi2, Xiao Zhigang2,Huang Shaoyan2 , Liu Minbo2 , Zhang Yong2 ,Liu Yinong1 (1 Dept of engineering physics, Key Laboratory of Particle & Radiation Imaging Ministry of Education, Tsinghua University , Beijing, 100084, CHN) (2 Northwest Institute of Nuclear Technology, P.O.Box 69-10,Shaanxi ,Xi’an ,710024,CHN)

【机构】 清华大学工程物理系粒子技术与辐射成像教育部重点实验室； 西北核技术研究所；

【摘要】 初步研究了沟道长为0.18μm的超深亚微米LDD NMOSFET的中子辐照效应。分析了中子位移辐照损伤机理;数值模拟了0.18μm LDD NMOSFET的阈值电压和亚阈值电流随能量为1MeV的等效中子在不同辐照注量下的变化关系;通过数值模拟比较了中子辐照诱发的不同缺陷能级对0.18μm超深亚微米LDD NMOSFET的影响。部分数值模拟结果与反应堆中子辐照实验结果进行了比对。更多还原

【Abstract】 The neutron radiation effects on 0.18μm LDD NMOSFET is researched primarily. The damage mechanism of neutron radiation is analyzed. The threshold voltages and the subthreshold currents which change with the different radiation fluence of neutron with the energy of 1MeV are numerically simulated. The effects of different trap levels induced by neutron radiation are compared by numerical simulation. The part of simulation results are compared with the experiment results of reactor neutron radiation.更多还原