节点文献
硅光电倍增管的新发展
The new development of silicon photomultiplier(SiPM)
【Author】 Li Liang, Gong Guanghua (Department of Engineering Physics, Tsinghua University, Beijing, 100084, China)
【机构】 清华大学工程物理系;
【摘要】 半导体探测器有着很好的位置分辨率,这一特性是任何气体探测器和闪烁探测无法比拟的。随着科学技术和加工工艺的不断发展,科学家们利用各种半导体研制出各种新型的半导体探测器,如硅微条、Pixel、CCD、硅漂移室等[1],这些探测器在高能物理,天体物理,核医学,X光成像以及军事等各领域都得到了广泛的应用。近几年高能物理的所有新发现(t夸克,标准模型等)都与这些高精度的、优良特性的探测器密不可分,所以,国际上很多大型实验室都十分重视半导体探测器的开发与应用。
【Abstract】 Semiconductor detector has a high resolution of position, this feature is much better than gas detectors and scintillation detections. Along with the continuous development of science and processing technology, scientists developed a variety of semiconductors, such as silicon microstrip, Pixel, CCD and silicon drift chamber. These detectors have been widely used in high energy physics, astrophysics, nuclear medicine, X-ray imaging, military and other fields. In recent years, all the breakthrough of high-energy physics (as t quark, the standard model) are closely linked with these detectors. Many large international laboratories also have pay great attention to the development and application of these kinds of semiconductor detectors.
- 【会议录名称】 第十五届全国核电子学与核探测技术学术年会论文集
- 【会议名称】第十五届全国核电子学与核探测技术学术年会
- 【会议时间】2010-08-13
- 【会议地点】中国贵州贵阳
- 【分类号】TL814
- 【主办单位】中国电子学会核电子学与核探测技术分会、中国核学会核电子学与核探测技术分会