【作者】 李鹏伟； 郭旗； 任迪远； 于跃； 王义元； 高博；

【Author】 LI Pengwei~(1,2) GUO Qi~1 REN Diyuan~1 YUYue~(1,2) WANG Yiyuan~(1,2) GAO Bo~(1,2) (1.Xinjiang Technical Institute of Physics & Chemistry CAS,Urumqi,Xinjiang 830011) (2.Graduate University of Chinese Academy of Sciences,Beijing,10083)

【机构】 中科院新疆理化技术研究所； 中国科学院研究生院；

【摘要】 基于线阵商用CCD器件,开展了⁶⁰Coγ射线不同剂量率的辐照实验和室温退火研究。分别考察了CCD的功耗电流、复位电压,光响应灵敏度和电荷转移效率等参数的变化。结果表明所测量的CCD参数随γ总剂量增加而逐渐衰退,高剂量率辐照下的器件损伤效应明显高于低剂量率的器件。室温退火发现高剂量率辐照后CCD的不同参数恢复到与低剂量率辐照接近的水平,表明辐射感生氧化物电荷是导致不同剂量率效应差异的主要原因。更多还原

【Abstract】 Experiments on radiation of different gamma dose rate and room temperature annealing been carried out based on commercial charge-coupled devices.The Power current,reset voltage,optical sensitivity and charge transfer efficiency(CTE) of CCD have been studied.The result indicate that the parameter of CCD have been degraded with gamma total dose increasing have to be discovered.High dose rate caused Radiation damage effects on CCD is much clearer to low dose rate irradiation.After room temperature annealing,the parameter of higher dose rate irradiated CCD have been recovered to the same degree with low dose rate irradiation.Oxide-charge caused by ionizing radiation is the main reason for different dose rate effects.更多还原