【作者】 韩军； 谢彦召； 翟爱斌； 姚志斌；

【Author】 Hanjun,XieYan-zhao,ZhaiAi-bin,YaoZhi-bin (Northwest Institute of Nuclear Technology,P.O.Box 69-10,Xi’ an 710024,China)

【机构】 西北核技术研究所；

【摘要】 实验研究了不同脉冲宽度下静态随机存储器SRAM的电磁脉冲效应,重点研究不同存储器容量、存储器读写状态与否等情况下的效应规律,实验场强在2.5至40千伏/米之间。实验结果表明,存储器的翻转效应与存储容量大小、激励电磁脉冲的脉冲宽度关系不大,电磁脉冲的场强幅值是其主要的敏感参数。此外,存储器处于读写状态即片选有效时其效应更为严重。更多还原

【Abstract】 The response of SRAM with different organization at different read/write state excited by different band width EMP was studied,the Electric field amplitude was range from 2.5 to 40 kV/m.It was found that there is no relation between upset number and organization or band width. The Electric field amplitude was the susceptive parameter.Further more,the effect was more seriously when the SRAM was at read/write state.更多还原