【作者】 林军； 张维佳； 杨东杰； Jean Jacques HAVUGIMANA； 孙月峰； 刘嘉； 马强；

【Author】 Jun LIN,Weijia ZHANG,Dongjie YANG,Jean Jacques HAVUGIMANA,Yuefeng SUN,Jia LIU,Qiang MA School of Physics & Nuclear Energy Engineering,Beihang University,Beijing,China

【机构】 北京航空航天大学物理科学与核能工程学院；

【摘要】 以自制的高电导、高致密度的掺铝氧化锌陶瓷靶为靶材,采用直流磁控溅射技术,在玻璃衬底上制备了ZnO:Al(AZO)薄膜。研究了衬底温度对AZO薄膜晶体结构、电学和光学性能的影响,并成功将其应用于纳米硅薄膜太阳电池的透明导电膜层。实验结果表明:在衬底温度为200℃、氧氩分压比为0.7%时,薄膜的光电性能最好,电阻率达到4.07×10-4Ω·cm,平均透过率可达到90%以上,光学带隙宽度达到3.4eV。测得太阳电池的I-V特性参数为:开路电压Voc=534.3mV,短路电流Jsc=22.915mA/cm2。更多还原

【Abstract】 Aluminum-doped zinc oxide(ZnO:Al) transparent conductive thin films have been prepared by DC magnetron sputtering with high conductivity and density AZO ceramic target(98wt.%ZnO+2 wt.%Al2O3) made by our laboratory. The influences of substrate temperature on the microstructure,electrical and optical performances of AZO films have been studied. The experimental results show that with the substrate tempera-ture of 200℃ and the oxygen /argon ratio of 0.7%,the AZO thin films with resistivity of 4.07×10-4 ·cm,visible light transmittance beyond 90% and band gap up to 3.4eV can be obtained. The solar cells test result showed that the open circuit voltage(Voc) and the short circuit current density(Jsc) were 534.3mV and 22.915mA/cm2,respectively.更多还原