【作者】 杨东杰； 张维佳； 林军； Jean Jacques HAVUGIMANA； 刘嘉； 孙月峰； 马强；

【Author】 Dongjie YANG,Weijia ZHANG,Jun LIN,Jean Jacques HAVUGIMANA,Jia LIU,Yuefeng SUN,Qiang MA School of Physics & Nuclear Energy Engineering,Beihang University,Beijing,China,100191

【机构】 北京航空航天大学物理科学与核能工程学院；

【摘要】 采用射频等离子体增强化学气相沉积(RF-PECVD)方法,以高氢稀释的硅烷(SiH4)为反应气体,硼烷(B2H6)为掺杂气体,氢气(H2)为稀释气体,在玻璃衬底上制备出掺硼的氢化纳米硅(nc-Si:H)薄膜,分别研究了衬底温度和硼掺杂量对氢化纳米硅(nc-Si:H)薄膜微结构和光电性能的影响。结果表明:掺硼硅薄膜的晶粒尺寸在1.5～2.0nm左右,晶化率在30%～50%左右,光学带隙最高可达2.15eV;室温电导率最高可达12.39S·cm-1。将p型nc-Si:H薄膜应用到Al栅极/AZO/p-nc-Si:H/n-c-Si/Al背电极异质结太阳电池中,制备出的面积为20mm×20mm的电池开路电压达到563.7mV,短路电流达到123.72mA。更多还原

【Abstract】 Boron-doped p-type nc-Si:H thin films were deposited on glass by RF-PECVD system. The influence of deposition parameters including substrate temperature and boron doping concentration on the microstructure and optoelectronic properties were studied systematically. The results showed that nano-silicon grain size and crystal volume fraction were between 1.5～2nm and 30%～50%,respectively. The highest optical band gap and room-temperature conductivity of p-nc-Si:H thin films can achieve 2.15eV and 12.39S·cm-1,re-spectively. The solar cell of Al/AZO/p-nc-Si:H/n-c-Si/Al configuration with 20mm×20mm area achieved high open circuit voltage(Voc=563.7mV) and short circuit current(Isc=123.72mA) .更多还原