【作者】 潘红星； 王茺； 熊飞； 张学贵； 杨杰； 李天信； 杨宇；

【Author】 PAN Hong-xing~1,WANG Chong~1,XIONG Fei~1,ZHANG Xue-gui~1, YANG Jie~(1,2),LI Tian-xin~3,YANG Yu~1 (1.Institute of Optoelectronic Information Materials,Academy of Engineering and Technology,Yunnan University,Kunming 650091,China; 2.Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China; 3.Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

【机构】 云南大学工程技术研究院光电信息材料研究所； 昆明理工大学冶金与能源工程学院； 中国科学院上海技术物理研究所；

【摘要】 采用离子束溅射技术,在生长了Si缓冲层的硅基底上制备了一系列Ge量子点样品。利用Raman光谱和AFM对样品进行表征,系统研究了随着缓冲层生长温度的改变,量子点的面密度和尺寸的演变规律。实验结果表明,通过控制缓冲层的生长温度,可以实现对Ge量子点形貌和尺寸的控制,从而获得高密度和小尺寸的Ge量子点。尝试解释了Si缓冲层在Ge量子点生长过程中的作用。更多还原

【Abstract】 A series of Ge quantum dot samples were grown on Si(100) substrates with a Si buffer layer by ion beam sputtering.The surface morphology and structure were studied with AFM and Raman spectra.The topography as well as the evolution of the size and density of Ge quantum dots was observed with changing the growth temperature of Si buffer layers.It is indicated that the topography of Ge quantum dots as well as their size and density could be controlled by the growth temperature of Si buffer layers.Consequently,Ge quantum dots with narrow size distribution and high density can be obtained by the ion beam sputtering technique.The effects of Si buffer layers which manipulate the growth and shape of the Ge quantum dots were well discussed.更多还原