【作者】 沈燕龙； 张维佳； 赵而敬； 张静； 杨东杰； 林军； 亚克；

【Author】 SHEN Yan-long,ZHANG Wei-jia,ZHAO Er-jing,ZHANG Jing, YANG Dong-jie,LIN Jun,YA Ke (School of Physics & Nuclear Energy Engineering,Beihang University,Beijing 100191,China)

【机构】 北京航空航天大学物理科学与核能工程学院；

【摘要】 使用等离子体化学气相沉积的方法成功制备了厚度在30nm量级的超薄氢化纳米硅薄膜,采用单角度激光椭偏仪和光度法结合的方法测量,利用模拟退火算法和单纯形法处理椭偏数据,对其厚度和光学性质进行表征,比较了该方法与使用单一椭偏仪结果的不同。研究发现,在30nm量级范围内,仅使用椭偏仪时,厚度与折射率、消光系数之间存在强烈的相关性,其解的唯一性区间较大,很难判断出真实的解。而采用椭偏法和光度法结合来测量超薄氢化纳米硅薄膜的光学参数取得了令人满意的效果。更多还原

【Abstract】 The hydrogenated nanocrystalline silicon thin film with the thickness of approximately 30nm was achieved by plasma enhanced chemical vapor deposition(PECVD).The determination the thickness and optical constants was by combined muti-angle laser ellipsometry and spectrophotometry and the date was computed by the simulated-annealing algorithm and simplex method.The difference was given by the method only depended on the ellipsometry data.The results indicated that,there were a strong correlation between thickness and optical constants and a long uniqueness range only by ellpsometry.The result was improved and in accordance with the measurement of high-precision surface profile and the reported optical constant by the addition of the limitation of the flim’s photometric data.更多还原