【作者】 赵而敬； 张维佳； 沈燕龙； 张静； 林军； 杨东杰； Havugimana Jean Jacques；

【Author】 ZHAO Er-jing,ZHANG Wei-jia,SHEN Yan-long,ZHANG Jing,LIN Jun, YANG Dong-jie,Havugimana Jean Jacques (School of Physics & Nuclear Energy Engineering,Beihang University,Beijing 100191,China)

【机构】 北京航空航天大学物理科学与核能工程学院；

【摘要】 利用射频为13.56MHz的等离子体化学气相沉积(PECVD)设备,通过对电池的本征和N型纳米硅薄膜的制备工艺以及电池背电极的烧结工艺参数优化,制备出结构为Al栅极/ITO/N-nc-Si:H/I/P-c-Si/Al背电极异质结太阳电池。利用SEM,Raman,XRD等测试方法,对电池的膜层性能分析,结果表明:电池的本征膜层纳米硅晶粒在2～3nm之间,光学带隙在1.55～2.01eV之间变化可调;掺杂膜层的室温电导率优于3×10~1S/cm;背电极烧结完全达到硅铝共熔,形成良好的硅铝合金区。面积为20mm×20mm的电池开路电压达到532mV,短路电流达到116mA。更多还原

【Abstract】 The solar cells which structure is Al /ITO/N-nc-Si:H/I/P-c-Si/AKBSE) were prepared using the 13. 56MHz RF plasma chemical vapor deposition（PECVD） by optimizing process of intrinsic,doping nanocrystal-line silicon films and optimizing sintering parameters of back electrode,respectively.Properties of the thin films were characterized by SEM,Raman,XRD and other appropriated tests.The results show that nano-silicon grain size is between 2-3nm,the nano-silicon optical band gap is about 1.55-2.OleV;The room-temperature conductivity of doping films is more than 3×10¹ S/cm;Silicon aluminum back electrode become to alloy,the solar cell with 20mm×20mm area achieves high open circuit voltage(V_oc = 532mV) and short circuit current(I_sc = 116mA).更多还原