【作者】 章天金； 周东祥； 龚树萍；

【Author】 Zhang Tianjin Zhou Dongxiang Gong Shuping (Department of Solid State Electronics,Huazhong University of Science and Technology,Wuhan,430074,China)

【机构】 华中理工大学固电系；

【摘要】 研究了Bi₄Ti₃O₁₂掺杂对低压ZnO压敏电阻器电性能影响规律,探讨了退火温度对样品的电性能的影响,分析了Bi₄Ti₃O₁₂掺杂作用机理。结果表明: Bi₄Ti₃O₁₂掺杂综合了TiO₂和Bi₂O₃分别掺入的优点,并能克服Bi₂O₃高温挥发的缺点,避免TiO₂在晶界或晶粒中的不良行为的发生。对于掺0.5mol%的Bi₄Ti₃O₁₂样品,在1280℃烧结2h可获得压敏电压为45V,非线性系数α高达32,漏电流I_L小于3μA的低压压敏电阻器。更多还原

【Abstract】 The regularity of the effect of Bi₄Ti₃O₁₂—doped on the electric properties of low voltage ZnO varistor were studied.The effect of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi₄Ti₃O₁₂—doped was analysised.It is found that the electric properties Bi₄Ti₃O₁₂—doped sample is better than Bi₂O₃ and TiO₂—doped samples,and the samples of Bi₄Ti₃O₁₂—doped can overcome the weakness of Bi₂O₃ evaporated at high temperature.For 0.5mol%Bi₄Ti₃O₁₂—doped samples,the electric characteristics is that V_1mA=45V,α>32,IL<3μA when the samples calcined at 1280℃for 2h.更多还原