【作者】 马以武； 宋箭； 常慧敏； 王英先；

【Author】 Ma Yiwu Song Jian Chang Huimin (State Key Laboratories or Transducer of Technology,Hefei Institute of Intelligent Machines,Chinese Academy of Sciences,Hefei,230031,China)

【机构】 中国科学院合肥智能机械研究所传感技术国家重点实验室；

【摘要】 本文讨论了烧结峰温T_M对厚膜应变电阻性能的影响。实验证明,烧结温度对不同Ru-基厚膜应变电阻的影响不同:RuO₂>Bi₂Ru₂O₇>Pb₂Ru₂O_7-y;随着T_M上升,方阻R_□下降,电阻温度系数TCR上升,应变系数GF下降;导电相合成温度高,R_□值较大,TCR略大,GF较大;但TCR和GF值并不完全依赖于R_□和T_M。采用厚膜电阻的隧道阻挡层导电机理和液相烧结模型对实验结果进行了探讨。更多还原

【Abstract】 This paper discussed the effect of peak temperature（T_M） on thick film strain resistor（TFSR）. The stability of TFSR performance in the different sintering temperature are immerged:RuO₂>Bi₂Ru₂O₇>■Ru₂O_7-y.The conducting component of TFSR were prepared under different Ru- based materials and sinter■g conditions.The sheet resistance of TFSR decreases and temperature coefficient of resistance（TCR） becomes more positive with increasing peak temperature（T_M）,gauge factor（GF） is related to the conducting component materials and surface area.The conduction mechanism of TFSR and liquid phase sintering model were discussed in explaining the value of R_□,TCR,GF.更多还原