【作者】 李春雷； 庄大明； 张弓； 宋军；

【Author】 Li Chun-lei;Zhuang Da-ming;Zhang Gong;Song Jun;Department of Mechanical Engineering Tsinghua University;

【机构】 清华大学机械工程系；

【摘要】 作为CIGSe太阳能电池重要组成部分的CIGSe吸收层可以采用预制膜+硒化两步法制备。本文采用磁控溅射方法制备了成分均匀、具有一定成分比例的CuIn、CuGa、CuInGa预制膜。X射线荧光分析(XRF)结果显示随着溅射电流的增加,CuIn预制膜的Cu/In原子比减小,CuGa预制膜的Cu/Ga原子比不变;X射线衍射分析(XRD)结果显示对于CuIn预制膜,随着溅射电流的增加,CuIn预制膜中的主要组成相由Cu2In相向Cu2In、CuIn、In相转变。更多还原

【Abstract】 As the crucial part of CIGSe solar cell,CIGSe absorber can be prepared by a method which can be called two-step process with combination of precursor deposition and selenization.In the work,CuIn,CuGa and CuInGa precursors with uniform compositions and certain element ratio could be prepared by magnetron sputtering.XPF testing results show that the atomic ratios of Cu/In in CuIn films decrease with the increase of sputtering current while the atomic ratios of Cu/Ga keep unchanged.XRD results show CuIn precursor mainly consists of Cu2 In and CuIn.phases.As the sputtering current increases,the peak of CuIn phase grows stronger than that of Cu2 In phase,which indicate that it is favorable for the preference grow of CuIn phase at higher sputtering current.更多还原