【作者】 李春雷； 庄大明； 张弓； 刘江； 宋军；

【Author】 Li Chun-lei;Zhuang Da-ming;Zhang Gong;Liu Jiang;Song Jun;Department of Mechanical Engineering,Tsinghua University;

【机构】 清华大学机械工程系；

【摘要】 本文采用磁控溅射的方法制备Glass\CuIn\CuGa结构的CIG预制膜,采用固态硒源硒化法制备CIGSe薄膜。利用AES分析方法对比研究了CIG预制膜和CIGSe薄膜中Cu、In、Ga三种元素深度方向分布的不同,并采用XRD、XRF等分析方法考察硒化时间对CIGSe薄膜成分、结构的影响。研究结果表明:具有Glass\CuIn\CuGa结构的预制膜在硒化过程中,薄膜中Ga元素迅速富集至薄膜背面,Cu、In两种元素则趋向于在深度方向上均匀分布。随着硒化时间的增加会有少量的Ga元素由薄膜背面向表面扩散,处于热力学平衡状态的CIGSe薄膜中的Ga元素倾向于以间隙原子的形式存在于薄膜中。更多还原

【Abstract】 In this work CIG precursors with a stack structure of Glass(substrate)\CuIn\CuGa were prepared by magnetron sputtering.Then the precursors as-grown were selenized in the Se atmosphere to form CIGSe thin film.The differences of distributions of elements Cu In and Ga in CIG and CIGSe were analyzed by AES.We also analyzed the phase structures and compositions of CIGSe thin films with different selenization durations by XRD and XRF.The results show that:the Ga-enrichment at the bottom of CIGSe occurs as soon as the process of selenization starts,the compositions of Cu and In tends to be uniform through the depth.There will be a certain small amount of Ga diffusing to the surface as the results of the increase of selenization duration.Element Ga in CIGSe prefers to perform as interstitial solid solution when it is close to thermodynamic equilibrium.更多还原