【作者】 周萍； 吕学超； 张永彬； 赖新春； 郎定木； 李宗亮； 蒋春丽；

【Author】 ZHOU Ping,LV Xue-chao,ZHANG Yong-bin,LAI Xin-chun, LANG Ding-mu,LI Zong-liang,JIANG Chun-li (Science and Technology on Surface Physics and Chemistry Laboratory,Jiangyou of Sichuan Prov.621907,China)

【机构】 表面物理与化学重点实验室；

【摘要】 采用脉冲激光溅射沉积的方法,在Si表面沉积了金和贫铀薄膜。通过SEM和白光干涉分析结果表明,PLD沉积法能够制备出粗糙度小于1 nm、表面光滑、致密、厚度一致性较好的Au、U薄膜。PLD的关键在于减少薄膜表面液滴,这可通过增大靶基距并减小激光能量实现。同时,适当升高基片温度亦有利于减少液滴,但会增加U薄膜中的氧含量。更多还原

【Abstract】 Depleted uranium(DU) and gold films are deposited separately on single crystal silicon substrate by pulsedlaser deposition.The surface morphology、roughness、oxygen concentration and microstructure of the DU and Au film were analyzed by sanning electron microscope,Auger electron spectroscopy,X-ray diffraction and white light interference profilometer.The results show that the Au and DU film prepared by PLD exhibits smooth surface with roughness less than 1 nm,and oxygen concentration in uranium films are below the detection limit of Auger electron spectroscopy. The key technology of PLD is to eliminate the metal droplet which seriously affected the interface consistency through reducing laser energy and increasing the distance between target and substrate.It is good for decreasing metal droplet through raising temperature of substrate to some extent but would also cause the increasement of oxygen.更多还原