【作者】 魏正军； 王金东； 张智明； 刘颂豪；

【Author】 Wei Zhengjun,Wang Jindong Zhang ZhiMing Liu SongHao(Laboratory of Photonic Information TechnologySSIPSE & LQIT,South China Normal UniversitySGuangzhou,510006,China)

【机构】 量子信息技术广东省高校重点实验室信息光电子科技学院华南师范大学；

【摘要】 分析了无源抑制模式的单光子探测器的时间特性,给出了无源抑制模式下,雪崩光电二极管(APD)的雪崩淬灭时间和恹复时间的表达式。分析结果表明,负载电阻值越大,雪崩淬灭时间越短,而电路的恹复时间越长。无源抑制模式单光子探测器的探测周期主要由恹复时间所制约,所以,在确保APD不过流的条件下,应该选取较小的负载电阻值。分布电容会显著的延长APD的雪崩淬灭时间和电路的恹复时间。因此需要采用合理的电路结构和布局来减小分布电容。这一研究浖有助于APD的特性测量和单光子探测器的设计。更多还原

【Abstract】 This paper analysed the time character of passive quenching single photon detector,and obtained the quenching time of avalanche photondiodes and recovery time of the circuits.The results indicate the higher the load resistance is,the shorter the quenching time is and the long the recovery time is.The detecting cycle is main restricted by the recovery time,so the value of the series resistance should as small as possible,when the APD is protected from over current.The stray capacitence will prolong the quenching time and recovery time remarkably.Therefore proper circuit configuration and layout are necessary to reduce the stray capacitence.This research will help for the measurement of APD and design of single photon detector.更多还原