【作者】 余连杰； 史衍丽； 李雄军； 杨丽丽； 邓功荣； 何雯瑾； 莫镜辉；

【Author】 YU Lianjie,SHI Yanli**,LI Xiongjun,YANG Lili,DENG Gongrong,HE Wenjin,MO Jinghui(Kunming Institute of Physics,Kunming,650223,China)

【机构】 昆明物理研究所；

【摘要】 利用射频磁控溅射方法,在宝石衬底上制备了非晶态HgCdTe薄膜。对原生非晶态HgCdTe薄膜进行了不同退火时间和不同退火温度的热退火,在80K-300K温度范围内,分别测量了原生和退火处理后的非晶态HgCdTe薄膜样品的稳定态光电导,研究了退火时间和退火温度对非晶态HgCdTe薄膜的稳定态光电导和激活能的影响。实验结果表明,原生和退火非晶态HgCdTe薄膜的稳定态光电导具有热激活特性。随着退火时间增加或退火温度升高,非晶态HgCdTe薄膜的晶化程度提高,导致光电导增大,光电导激活能降低。利用非晶-多晶转变机制讨论了实验结果。更多还原

【Abstract】 Amorphous HgCdTe thin films were prepared by R.F.sputtered technique on the quartz substrate.The steady state photoconductivity measurements were carried out on as-deposited and thermal annealed amorphous HgCdTe thin films.Temperature dependence of photoconductivity shows that photoconductivity is through a thermally activated process in 80K～300K.The effect of annealing on the steady state photoconductivity and the activation energy was studied.An amorphous-crystalline transition is induced by thermal annealing.The crystallized fraction of a-HgCdTe thin films increases with annealing temperature and annealing time,and results in increasing the steady state photoconductivity and decreasing in the thermal activation energy of photoconductivity.The results were discussed on the basis of amorphous-crystalline transformations.更多还原