【作者】 王光绪； 熊传兵； 汪延明； 肖宗湖； 张萌； 江风益；

【Author】 Wang Guangxu~1,Xiong Chuanbing~(1,2),Wang Yanming~1,Xiao Zonghu~1, Zhang Meng~(1,2),Jiang Fengyi~(1,2) (1.Education Ministry Engineering Research Center for Luminescence Materials and Devices,Nanchang University,Nanchang 330047,China;2.Latticepower(Jiangxi) Corporation,Nanchang 330029,China)

【机构】 南昌大学教育部发光材料与器件工程研究中心； 晶能光电(江西)有限公司；

【摘要】 通过电镀的方法将Si衬底GaN LED薄膜分别转移至铜铬、铜镍基板上,并制备成不同电镀基板的LED芯片。研究发现,铜镍基板LED芯片较铜铬基板droop效应得到改善,说明铜镍基板LED芯片具有更好的散热性能;高分辨XRD结果显示铜铬基板LED薄膜受残余张应力作用,而铜镍基板LED薄膜则受压应力作用,表明在LED工作状态下铜镍基板LED芯片具有更优良的力学性能;铜镍基板LED芯片的波长漂移较铜铬基板更小,且经过900 mA常温老化192 h后,芯片电学性能稳定。结果表明,铜镍基板LED芯片较铜铬基板具有更优良的力、热、光、电特性。更多还原

【Abstract】 GaN LED films grown on Si(111) substrate were transfered onto CuCr and CuNi metal substrates by electroplating seperately.The study found that the droop effect of LED transferred on CuNi substrate was alleviated,indicating that the CuNi substrate has better heat dispersion property than that of CuCr substrate.The high resolution XRD shows that the residual tensile stress exists in the LED film on CuCr substrate and the compressive stress exists in the LED film on CuNi substrate,which indicates the LED on CuNi substrate has better mechanical performance.The LED on CuNi substrate has less wavelength shift and the stable electrical performance after aging 192 h under the room temperature,900 mA.In conclusion,the results indicate that LED chips on CuNi substrate has better mechanical,thermal,optical and electrical characteristics.更多还原