【作者】 莫尚军； 张继华；

【Author】 Mo Shangjun,Zhang Jihua (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】 用自主研发的射频磁控溅射设备在LaAlO₃基片上制备了用于动态随机存储器（DRAM）的钛酸锶钡（BST）薄膜,采用AFM和XRD对薄膜的微结构进行了分析,用LCR测试仪测试了薄膜的介电性能。结果显示800℃退火30 min的BST薄膜结晶性能良好,薄膜均方根表面粗糙度小于4.5 nm,1 MHz下介电常数为713,介电损耗为0.007。10 V偏压下,漏电流密度为1×10^-7A/cm²。更多还原

【Abstract】 BST thin film used for dynamic random-access memory（DRAM） was fabricated by using RF magnetron sputtering coaters which is designed by our laboratory on LaAlO₃ substrate.The dielectric properties of the thin films were tested with LCR instrument and evaluated its microstructure with atomic force microscope （AFM） and X-ray diffraction spectroscopy（XRD）.The results show that the crystalline properties of the BST thin film is good and the root-mean-square（RMS） surface roughness is below 4.5 nm after annealed at 800℃for half an hour.The dielectric constant and the dielectric loss of the BST thin films are 713 and 0.007 at 1 MHz,and the current density is 1×10^-7 A/cm² at the the bias voltage is 10 V.更多还原