【作者】 周晓龙； 杨克武； 杨瑞霞； 孙聂枫； 孙同年；

【Author】 Zhou Xiaolong~(1,2),Yang Kewu~(1,2),Yang Ruixia~1,Sun Niefeng~2,Sun Tongnian~2 (1.College of Information Engineering,Hebei University of Technology,Tianjin 300130,China;2.The 13~(th) Research Institute,CETC,Shijiazhuang 050051,China)

【机构】 河北工业大学信息工程学院； 中国电子科技集团公司第十三研究所；

【摘要】 基于目前对大尺寸InP单晶片的应用和需求,介绍了正在使用的封闭式热场结构,阐述了利用LEC(液封直拉)法在InP体材料生长过程中影响成晶率的一些关键因素,如温度梯度和热对流等,分析了有利于晶体生长的条件,对加热器、保温系统和单晶炉系统参数配置等进行了有利于热场的优化。研究了放肩形状和固液界面的形状对晶体质量的影响,认为正方形的放肩和平坦但微凸向熔体的固液界面可以提高InP单晶的成晶率和质量。结果表明,能连续多次生长出大尺寸的InP体单晶,而且经过外延后制作的InP基器件的性能令人满意。更多还原

【Abstract】 Based on the applications and requirements of InP single crystal wafers with large dimension, the closed thermal-field structure which have been used was introduced.It was elaborated that the influences of some key factors such as the temperature gradients and thermal convections on the percentage of the number of the grown single crystals to that of the whole grown crystals pulled by the LEC method.There were several growth conditions such as heaters,heat-preservation systems,puller parameters’ configurations and so on which had been optimized to improve the thermal field.It had been discussed and confirmed that the squareshape shoulders and the slightly convex-to-melt shaped solid-liquid interface were good to improve the quality of the grown InP single crystals.The results show that large dimension InP single crystal could be grown several times continuously and the InP based devices were manufactured by such wafers after epitaxial growth is in satisfied performance.更多还原