【作者】 董四华； 杨光晖； 刘英坤； 张鸿亮； 邓建国；

【Author】 Dong Sihua,Yang Guanghui,Liu Yingkun,Zhang Hongliang,Deng Jianguo (The 13~(th) Research Institute,CETC,Shijiazhuang 050051,China)

【机构】 中国电子科技集团公司第十三研究所；

【摘要】 目前,国内采用等平面自对准等先进工艺技术研制而成的、国产化S波段Si功率晶体管性能已达到实用化应用要求。基于先进的负载牵引测试技术,对小型化S波段功率放大器模块匹配电路进行了优化设计,研制出了体积为150 mm×40 mm×20 mm的S波段功率放大模块。在2 100～2 300 MHz频带内,S波段功率放大模块实现了输出功率P_out〉160 W,功率增益G_p〉29 dB,集电极效率η_c〉33%。更多还原

【Abstract】 With the improvement of the request for microwave performance,China-made microwave power device develop very fast.With equi-planar and self-aligned technology,a high gain,high collector efficiency and high stability S-band Si microwave pulsed power transistor was manufactured successfully.The load pull technology and the optimize design of amplify module matching circuit were introduced.This design has invented S-band amplify module whose cubage is 150 mm×40 mm×20 mm.Module has realized that output power is more than 160 W at 2 100-2 300 MHz,and P_out>160 W,G_P>29 dB,η_C>33%。更多还原