【作者】 马艳； 张源涛； 张宝林； 杜国同；

【Author】 Ma Yan~(1,2),Zhang Yuantao~2,Zhang Baolin~2,Du Guotong~(1,2) (1.College of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024,China; 2.State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering, Jilin University,Changchun 130012,China)

【机构】 大连理工大学物理与光电工程学院； 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室；

【摘要】 在不同温度下利用MOCVD方法生长了ZnO薄膜,并在较高温度下进行了NH₃掺杂。采用X射线光电子能谱（XPS）技术分析了薄膜的性质,结果表明,生长温度和N掺杂会影响薄膜的表面吸附、O缺陷、C、H杂质、元素价态、化学键的断裂及晶粒尺寸等性质。440℃低温下生长的薄膜,C、H杂质及O缺陷较多,晶粒尺寸较小。在530℃生长的薄膜中,可以见到由断裂两个键的Zn离子所引起的2p_3/2光电子峰。NH₃掺杂以后,ZnO薄膜表面O1s峰移向低能侧,而在内部则移向高能侧。更多还原

【Abstract】 ZnO thin films were grown on（0001） sapphire substrates at different temperatures by metal-organic chemical vapor deposition（MOCVD）.The film was doped with NH₃ for comparison at 530℃.The properties of the films were investigated by X-ray photoelectron spectroscopy （XPS）.The results show that the growth temperature and N doping could influence on the surface adsorption,O deficiency,the amounts of the carbon,hydrogen impurities,the bond state, the broken chemical bond and the column grain size of the ZnO thin films.There exists more C, H impurities and oxygen deficiency in the ZnO thin film grown at 440℃.While in the film prepared at 530℃,the binding energy peak at 1 020.8 eV is assigned to the zinc ions with two broken bonds.The Ols peak of ZnO surface moves to low energy side and internally high energy after NH₃ doping.更多还原