【作者】 薛俊俊； 赵红； 陈敦军； 谢自力； 张荣； 郑有炓；

【Author】 Xue Junjun,Zhao Hong,Chen Dunjun,Xie Zili,Zhang Rong,Zheng Youdou (Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics,Nanjing University,Nanjing 210093,China)

【机构】 南京大学物理系江苏省光电信息功能材料重点实验室；

【摘要】 制备了一个Au/Pt/In_0.2Ga_0.8N肖特基原型太阳电池。采用热电子发射（E）模型和热电子场发射（FE）模型拟合了肖特基的正向I-V曲线,结果显示两种模型计算所得到的肖特基势垒高度和理想因子非常相近,表明所制备的In_0.2Ga_0.8N肖特基的电流输运机制主要体现为热电子发射。当采用功率密度为300 mW/cm²的氙灯照射时,In_0.2Ga_0.8N肖特基太阳电池呈现出的开路电压为0.91 V,短路电流密度为7 mA/cm²,填充因子为0.45,功率转换效率为0.95%。更多还原

【Abstract】 A patterned Au/Pt/In_0.2Ga_0.8N Schottky prototype solar cell was fabricated.By fitting a linear curve to the forward current-voltage（I-V） characteristics using the TE model or the TFE model,There exist only small differences in the SBHs and the ideality factors obtained from the TE and TFE models,respectively.Those indicate that the thermionic emission is a dominating current transport mechanism at the Pt/InGaN interface in our fabricated Schottky solar cell.The Au/Pt/ In_0.2Ga_0.8N Schottky solar cell has a very low dark current density,an open-circuit voltage of 0.91 V,a short-circuit current density of 7 mA/cm²,a fill factor of 0.45,and a power conversion efficiency of 0.95%when illuminated by a Xe lamp with the light intensity of 300 mW/cm².更多还原