节点文献
AlGaN/GaN异质结气体传感器对低体积分数CO的响应研究
Investigation of CO Gas Sensors Based on AlGaN/GaN at Low Concentration
【作者】 冯春; 王晓亮; 杨翠柏; 肖红领; 王翠梅; 侯奇峰; 马泽宇; 王军喜; 李晋闽; 王占国; 侯洵;
【Author】 Feng Chun~a,Wang Xiaoliang~a,Yang Cuibai~a,Xiao Hongling~a,Wang Cuimei~a, Hou Qifeng~a,Ma Zeyu~a,Wang Junxi~a,Li Jinmin~a,Wang Zhanguo~b,Hou Xun~c (a.Materials Science Center;b.Key Laboratory of Semiconductor Materials Science;c.ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)
【机构】 中国科学院半导体研究所材料中心; 中国科学院半导体研究所材料科学重点实验室; 中国科学院半导体研究所西安交通大学信息功能材料与器件联合实验室;
【摘要】 研究了基于AlGaN/GaN异质结材料的肖特基二极管气体传感器对于体积分数为2×10-4~10-3的CO气体的响应状况。在2 V正向偏压下,器件对于低至体积分数2×10-4的CO仍表现出了明显的响应(电流增大0.7 mA),随着CO体积分数的升高,器件的电流变化愈加明显,但在反向偏压下,通入CO气体对器件的电流大小无明显影响。对器件在不同体积分数CO下的灵敏度与外加偏压的关系也进行了研究,在正向偏压下,器件的灵敏度随着CO体积分数的升高而增大。当CO气体撤消时,器件表现出了迅速的恢复性能,2 V的恒定电压下,器件的恢复速度约为3 mA/min。
【Abstract】 The response of Schottky diode gas sensors based on AlGaN-GaN heterostructure for CO with low concentration(2×10-4- 10-3) was studied.The forward current exhibits large response even towards 2×10-4CO(current increases 0.7 mA).The current change becomes larger along with the increasing of CO concentration at a bias of 2 V.The reverse current has no response during the experiment condition.The relationship of sensitivity of the device and applied voltage is also investigated.Sensitivity under forward voltage is more remarkable.The device shows great recovery response characteristic after CO is taking off.All the results are measured at room temperature.
- 【会议录名称】 第十五届全国化合物半导体材料,微波器件和光电器件学术会议论文集
- 【会议名称】第十五届全国化合物半导体材料,微波器件和光电器件学术会议
- 【会议时间】2008-11-30
- 【会议地点】中国广东广州
- 【分类号】TN304
- 【主办单位】中国电子学会半导体与集成技术分会、电子材料分会