【作者】 朱学亮； 曲爽； 刘存志； 李树强； 夏伟； 沈燕； 任忠祥； 徐现刚；

【Author】 Zhu Xueliang~(1,2),Qu Shuang~(1,2),Liu Cunzhi~1,Li Shuqiang~1, Xia Wei~1,Shen Yan~1,Ren Zhongxiang~1,Xu Xiangang~(1,2) (1.Shandong Huaguang Optoelectronics CO.,LTD.,Jinan 250101 China; 2.State Key Laboratory of Crystal Material,Shandong University,Jinan 250101,China)

【机构】 山东华光光电子有限公司； 山东大学晶体材料国家重点实验室；

【摘要】 利用MOCVD在SiC衬底上采用AlN缓冲层外延GaN材料。GaN的X射线(002)和(102)摇摆曲线分别是303″和311″,表明获得了高质量的GaN材料。原子力显微镜照片能清晰地观察到GaN表面的原子台阶,材料的表面粗糙度为0.19 nm,小于蓝宝石衬底上GaN薄膜的粗糙度。采用不同厚度的AlN缓冲层外延GaN基蓝光LED,并研究了薄膜中的应变状态。当采用不同的AlN缓冲层时,倒易空间图证实InGaN/GaN量子阱区完全应变的外延在GaN层上,而AlN缓冲层则是弛豫的。外延片进行管芯工艺制备,得到高亮度的LED。更多还原

【Abstract】 GaN films were grown on SiC substrates by MOCVD with AlN buffer layer.The full width at half maximum of(002) and(102) X-ray rocking curves are 303 and 311,respectively, which confirms that high quality GaN films are prepared.Atomic force microscopy(AFM) image reveals that the GaN film has regular steps and terraces.The root-mean-square(RMS) roughness of GaN film grown on SiC is 0.19 nm.Blue LED were grown on SiC substrates with different AlN thickness and the strain was studied.The reciprocal space mappings reveal that InGaN/ GaN quantum wells are coherently grown on GaN buffer while the AlN buffer is relaxed.Blue LED chips were made and high bright LEDs were achieved.更多还原