【作者】 董志华； 王金延； 郝一龙； 文正； 王阳元；

【Author】 Dong Zhihua,Wang Jinyan,Hao Yilong,Wen Cheng P,Wang Yangyuan (Laboratory of Wide Band-Gap Semiconductors,Institute of Microelectronics, Peking University,Bejing 100871,China)

【机构】 北京大学微电子研究院宽禁带研究室；

【摘要】 提出了一种直接热氧化电子束蒸发Ti薄膜生成TiO₂绝缘栅的方法,制备出了MetalTiO₂-AlGaN/GaN结构。XRD分析表明氧化温度高于400℃时制备出的TiO₂薄膜为金红石结构。分析了不同的Ti热氧化条件及不同的退火工艺对于MIS结构的漏电流影响。经过工艺优化制备出的MIS结构漏电流密度可低至10^-7A/cm²数量级,击穿电压约为300V。实验数据表明,这种热氧化生成TiO₂绝缘栅的制备工艺简单、成本低,抑制栅漏电效果显著,有望应用于AlGaN/GaN基HEMT器件制备工艺中。更多还原

【Abstract】 Metal-TiO₂-AlGaN/GaN structures were obtained by oxidation of Ti films which were deposited onto AlGaN/GaN heterostructures using electron beam evaporator（EBE） in order to make the processing simpler and cheaper.TiO₂ dielectrics obtained above 400℃were analyzed rutile through X-ray diffraction spectra.Leakage current density of MIS structures obtained at different oxidation conditions was analyzed.A leakage current density of 2.203×10^-7 A/cm² is realized through fabricating optimization.The breakdown voltage of the MIS structures is measured to be about 300 V.MIS structure obtained in this way should be hopeful to be applied in AlGaN/GaNHEMTs.更多还原