【作者】 任春江； 李忠辉； 焦刚； 钟世昌； 董逊； 薛舫时； 陈辰； 陈堂胜；

【Author】 Ren Chunjiang,Li Zhonghui,Jiao Gang,Zhong Shichang,Dong Xun, Xue Fangshi,Chen Chen,Chen Tangsheng (National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electron Devices Institute,Nanjing 210016,China)

【机构】 南京电子器件研究所单片集成电路与模块国家重点实验室；

【摘要】 利用南京电子器件研究所的MOCVD设备在半绝缘4H-SiC衬底外延生长了AlGaN/GaN异质结,运用该材料研制了8 GHz输出功率密度10.52 W/mm的HEM器件。非接触霍尔测试表明,经过优化的AlGaN/GaN异质结材料中的二维电子气（2DEG）面密度为1.0×10¹³cm^-2,迁移率达1 880 cm²/V·s。在该材料上研制了栅长0.35μm带场板的AlGaN/GaNHEMT,小信号测试表明器件f_T为31.6 GHz,最高振荡频率f_max为36.8 GHz。研制的1 mm栅宽器件8 GHz、45 V工作电压下饱和输出功率为10.52 W,功率增益和功率附加效率分别为7.62 dB和45.8%。更多还原

【Abstract】 AlGaN/GaN hetreostructure was grown on semi-insulated 4H-SiC substrate by MOCVD in Nanjing Electron Devices Institute and the HEMT with saturated power density of 10.52 W/mm at 8 GHz was developed.Two-demensional electron gas（2DEG） density of 1.0×10¹³ cm² and mobility of 1 880 cm.2/V·s for the optimized AlGaN/GaN heterostructure were measured by contactless Hall measurements.0.35μm gate length AlGaN/GaN HEMTs with field plates were fabricated on the grown heterostructure.A current gain cut-off frequency of 31.6 GHz and a maximum oscillation frequency of 36.8 GHz were obtained through small signal measurements.The developed 1 mm gate width device reaches a saturation output power of 10.52 W at 8 GHz and 45 V operation voltage with a power gain of 7.62 dB and a power added efficiency of 45.8%.更多还原