【作者】 刘俊岐； 李路； 刘峰奇； 王利军； 王占国；

【Author】 Liu Junqi,Li Lu,Liu Fengqi,Wang Lijun,Wang Zhanguo (Key Lab of Semiconductor Materials,Institute of Semiconductor, Chinese Academy of Science,Beijing 100083,China)

【机构】 中国科学院半导体研究所半导体材料科学重点实验室；

【摘要】 量子级联激光器的器件性能在很大程度上取决于有源区结构的设计,有源区结构设计的两个关键因素是激光跃迁高能态电子的有效注入和低能态电子的有效抽取。对于后者本文利用四阱耦合结构在GaAs/AlGaAs量子级联激光器有源区形成双声子共振的电子驰豫机制并进一步通过优化粒子数反转条件和波导结构,获得了波长11.3μm(频率26.5 THz)的量子级联激光器83 K温度下峰值功率超过100 mW的激射。此项工作的成功为THz波段量子级联激光器的研究打下了坚实的基础。更多还原

【Abstract】 The performance of quantum cascade lasers is,to a large extent,rested upon the design of the active region and the design of the active region is related to two key factors:the injection of electrons to the upper level and the extraction of electrons from the lower level.In this work,to meet the second condition,double-resonant-phonon depopulation is formed through four coupled quantum wells and by optimizing the population inversion and waveguide structure a laser of 11,3μm wavelength is lasing with a peak power more than 100 mW at 83 K. The success of this work blazes a way for the research of THz quantum cascaded lasers.更多还原